3D V-NAND TECHNOLOGY
Samsung’s innovative 3D V-NAND flash memory architecture breaksthrough density, performance, and endurance limitations of today’s conventional planar NAND architecture. Samsung 3D V-NAND stacks 32 cell layers vertically resulting in higher density and better performance utilizing a smaller footprint.
Achieve incredible read/write performance to maximize your everyday computing experience with Samsung’s TurboWrite technology. You can obtain up to 2x faster random read write speeds than the award-winning Samsung 840 EVO. The 850 EVO delivers class-leading performance in sequential read (540MB/s) and write (520MB/s) speeds. Plus, gain optimized random performance in all QD for better real-world performance.
SAMSUNG’S MAGICIAN SOFTWARE ENABLES RAPID MODE FOR UP TO 2X FASTER PERFORMANCE* BY UTILIZING UNUSED PC MEMORY (DRAM) AS A HIGH-SPEED CACHE. THE NEWEST VERSION OF SAMSUNG MAGICIAN SUPPORTS UP TO A 4 GB CACHE ON A SYSTEM WITH 16 GB OF DRAM
IMPROVED ENERGY EFFICIENCY
The 850 EVO delivers significantly longer battery life on your notebook with a controller designed and optimized for 3D V-NAND that supports. Device Sleep for Windows at a highly efficient 2mW. The 850 EVO supports 25% better power efficiency than the 840 EVO during write operations thanks to ultra-efficient 3D V-NAND only consuming 50% less energy than that of traditional Planar 2D NAND.
THE VERSATILE 850 EVO MSATA HAS YOU COVERED NO MATTER WHICH CONNECTOR TYPE OR PHYSICAL SLOT SIZE YOUR DEVICE HAS, MAKING IT PERFECT FOR DESKTOPS, LAPTOPS AND EVEN ULTRA-THIN TABLET PCS
|Name||Samsung 850 EVO 1 TB mSATA 2-Inch SSD - MZ-M5E1T0BW|
|Device Type||Internal SSDs|
|Dimensions (mm)||0.1 x 1.2 x 2 inches|