3D V-NAND Technology
Samsung's innovative 3D V-NAND flash memory architecture breaksthrough density, performance, and endurance limitations of today's conventional planar NAND architecture. Samsung 3D V-NAND stacks 32 cell layers vertically resulting in higher density and better performance utilizing a smaller footprint.
Achieve incredible read/write performance to maximize your everyday computing experience with Samsung's TurboWrite technology. You can obtain up to 2x faster random read write speeds than the award-winning Samsung 840 EVO. The 850 EVO delivers class-leading performance* in sequential read (540MB/s) and write (520MB/s) speeds. Plus, gain optimized random performance in all QD for better real-world performance
|Name||Samsung 850 EVO 250 GB mSATA 2-Inch SSD - MZ-M5E250BW|
|Device Type||Internal SSDs|
|Max Sequential Read||Up to 540 MBps|
|Max Sequential Write||Up to 520 MBps|
|Dimensions (mm)||0.1 x 1.2 x 2 inches|